AC/DC Ratio Enhancement in Photoplethysmography Using a Pinned Photodiode
نویسندگان
چکیده
منابع مشابه
Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias †
A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be fully depleted. The first prototypes have been manufactured on an 18 µm thick, 1000 Ω·cm epitaxial silicon wafers using 180 nm PPD image sensor...
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A new pixel design using pinned photodiode (PPD) in a 180 nm CMOS image sensor (CIS) process has been developed as a proof of principle. The sensor can be fully depleted by means of reverse bias applied to the substrate, and the principle of operation is applicable to very thick sensitive volumes. Additional n-type implants under the in-pixel p-wells have been added to the manufacturing process...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2019
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2019.2940063